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The series FWPR-20 Photoreceivers combine low-noise Si or InGaAs photodiodes with a specially designed transimpedance amplifier with extremely high gain of up to 1012 V/A and very low noise. This unique combination results in a photoreceiver with Femtowatt sensitivity due to its exceptional low NEP of minimum 0.7 fW/√Hz. Direct detection of optical powers down to ca. 50 fW is possible and when combined with an optional FEMTO Lock-In Amplifier even sub-Femtowatt sensitivity can be achieved. Due to their very high sensitivity the FEMTO FWPR-20 series photoreceivers can replace APDs, PMTs and cooled Ge photodiodes in many applications. No expensive high voltage power supply or cooling is required. The FWPR-20-SI offers high quantum efficiency in the visible and near infrared similar to that of APD based single photon counting modules. In applications where timing is uncritical, e.g. when the signal of a photon counter is integrated for a few 10 ms or more the FWPR-20-SI photoreceiver achieves a comparable signal-to-noise ratio. For NIR spectroscopy the InGaAs model FWPR-20-IN achieves similar results as a much more expensive and complex system based on a liquid nitrogen cooled Germanium detector with external amplifier. As a result of the already integrated very low-noise high-gain amplifier signals in the Volt range can be achieved directly at the output of the series FWPR-20 Femtowatt Photoreceiver. Applications
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By combining state of the art photodiodes with the proven and outstanding FEMTO LCA Current Amplifier technology we designed a new family of photoreceivers with a remarkable performance. The LCA-S-400K is available with either a large area Si or InGaAs photodiode covering a spectral range from 400 to 1050 nm and 900 to 1700 nm, respectively. The amplifier transimpedance is 107 V/A resulting in a maximum conversion gain of 9.5 x 106 V/W at 1550 nm for the InGaAs model. Due to the low noise performance of the transimpedance amplifier the minimum NEP is as low as 75 fW/√Hz which allows for detection of optical signals in the nanoWatt range without further averaging. Applications
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The series HCA-S-200M Photoreceivers combine fast photodiodes with the proven and outstanding FEMTO HCA Current Amplifier technology. The HCA-S-200M is available with either a fast large area Si or InGaAs photodiode covering a spectral range from 320 to 1000 nm and 900 to 1700 nm, respectively. The amplifier transimpedance is 2 x 104 V/A resulting in a maximum conversion gain of 1.9 x 104 V/W at 1550 nm for the InGaAs model. The sophisticated DC coupled multi-stage amplifier design allows measurements from DC to a maximum bandwidth of 200 MHz corresponding to a minimum rise-time of 1.8 ns. With a NEP as low as 6 pW/√Hz signals with an optical power in the micro-Watt range can be detected without the need for further averaging. Applications
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The series HCA-S-400M Photoreceivers combine fast photodiodes with the proven and outstanding FEMTO HCA Current Amplifier technology. The HCA-S-400M is available with either a fast Si or InGaAs photodiode covering a spectral range from 320 to 1000 nm and 900 to 1700 nm, respectively. The amplifier transimpedance is 5 x 103 V/A resulting in a maximum conversion gain of 5 x 103 V/W at 1550 nm for the InGaAs model. The sophisticated DC coupled multi-stage amplifier design allows measurements from DC to a maximum bandwidth of 400 MHz corresponding to a minimum rise-time of 1 ns. Due to the low-noise design signals with an optical power in the micro-Watt range can be detected without the need for further averaging. Different models with free space or fiber optic input are available. Applications
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By combining state of the art photodiodes with the proven and outstanding FEMTO GHz amplifier technology we designed a new family of photoreceivers with a remarkable performance. The HSA-X-S offers an upper bandwidth limit of 2 GHz. Two models with either a fast Si or InGaAs photodiode cover a spectral range from 320 to 1000 nm and 850 to 1700 nm, respectively. Due to the sophisticated amplifier design the minimum NEP is just 14 pW/√Hz at a transimpedance of 5 x 103 V/A. This allows for the measurement of optical power levels in the µW range with GHz speed. For the HSA-X-S-1G4-SI with silicon photodiode the effective active diameter is a remarkably large 0.8 mm due to the use of a ball lens in front of the detector chip. Applications
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